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| 2SC1213A(K) Silicon NPN Epitaxial Application * Low frequency amplifier * Medium speed switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1213A (K) Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 50 50 4 500 400 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 50 50 4 -- 1 Typ -- -- -- -- -- -- 0.64 Max -- -- -- 0.5 320 -- -- 0.6 1.2 -- -- -- -- -- Unit V V V A Test conditions I C = 10 A, IE = 0 I C = 1.0 mA, RBE = I E = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 3 V, IC = 10 mA VCE = 3 V, IC = 500 mA*2 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE* hFE Base to emitter voltage Collector to emitter saturation voltage Base to emitter satruation voltage Collector output capacitance Gain bandwidth product Turn on time Turn off time Storage time VBE VCE(sat) VBE(sat) Cob fT t on t off t stg 60 10 V V V pF MHz S S S VCE = 3 V, IC = 10 mA I C = 150 mA, IB = 15 mA*2 I C = 150 mA, IB = 15 mA*2 VCB = 10 V, IE = 0, f = 1 MHz VCE = 3 V, IC = 10 mA VCC = 10.3 V I C = 10 IB1 = -10 IB2 = 10 mA -- -- -- -- -- -- -- 0.12 0.83 7.0 120 0.25 0.85 0.4 VCC = 5 V I C = IB1 = -IB2 = 20 mA Notes: 1. The 2SC1213A(K) is grouped by h FE as follows. 2. Pulse test B 60 to 120 C 100 to 200 D 160 to 320 2 2SC1213A (K) Switching Time Test Circuit ton, toff Test Circuit 6k 50 P.G. -6 V tr, tf 15 ns PW 5 s duty ratio 10% D.U.T. 6k 0.002 Switching Time Test Circuit CRT tstg Test Circuit 1.0 215 D.U.T. CRT 240 0.002 -+ 50 1k 0.002 -+ 50 10.3 V Unit R : C : F 200 100 P.G. tr 5 ns PW 5 s duty ratio 2% 0.002 -+ 50 7V +- 50 5V Unit R : C:F Response Waveform 13 V Input 0 Output 0 90% 10% td 90% 10% ton toff 90% Response Waveform 0 Input 9V Output 0 10% 10% tstg 500 Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 500 400 300 200 100 Collector Current IC (mA) 400 Typical Output Characteristics (1) 40 30 20 10 8 6 5 4 3 2 1 mA PC = 400 m W 300 200 100 IB = 0 0 50 100 150 Ambient Temperature Ta (C) 0 3 4 5 1 2 Collector to Emitter Voltage VCE (V) 3 2SC1213A (K) Typical Output Characteristics (2) 100 0.9 Collector Current IC (mA) 80 Collector Current IC (mA) 0.8 0.7 60 0.6 0.5 40 0.4 0.3 20 0.2 0.1 mA IB = 0 PC = 400 mW Typical Transfer Characteristics 30 VCE = 3 V 10 3 Ta = 75C 1.0 0.3 0 0.2 0.4 0.6 0.8 1.0 1.2 Base to Emitter Voltage VBE (V) 0 30 40 50 10 20 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Collector Cutoff Current vs. Collector to Base Voltage 100 Collector Current ICBO (nA) 30 10 3 1.0 0.3 0.1 0.03 30 40 50 0 10 20 Collector to Base Voltage VCB (V) 75 50 Ta = 25C DC Current Transfer Ratio hFE 100 140 VCE = 3 V 120 100 80 60 40 20 0 2 5 50 100 200 10 20 Collector Current IC (mA) 500 75 50 25 0 = Ta C -25 4 25 -25 2SC1213A (K) Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current 0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 10 30 100 300 1,000 0.1 0.3 1.0 3 Collector Current IC (mA) IC = 10 IB Base to Emitter Saturation Voltage vs. Collector Current 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.1 0.2 IC = 10 IB Pulse -25 0 25 50 C 75 a= T 0.5 1.0 2 5 10 20 50 100 200 500 Collector Current IC (mA) Input And Output Capacitance vs. Voltage Collector Output Capacitance Cob (pF) Emitter input Capacitance Cib (pF) 70 f = 1 MHz Gain Bandwidth Product fT (MHz) 60 50 Cib(IC = 0) 40 30 20 10 0 0.1 Cob(IE = 0) 280 240 200 160 120 80 40 0 Gain Bandwidth Product vs. Collector Current VCE = 3 V 0.3 1.0 3 10 Collector to Base Voltage VCB (V) Emitter to Base Voltage VEB (V) 30 2 5 50 100 200 10 20 Collector Current IC (mA) 500 5 2SC1213A (K) Switching Time vs. Collector Current 1,000 500 Switching Time t (ns) toff tstg 200 100 50 ton 20 10 5 50 100 200 10 20 Collector Current IC (mA) 500 VCC = 10.3 V IC = 10 IB1 = -10 IB2 td 6 Unit: mm 4.8 0.3 3.8 0.3 2.3 Max 0.5 0.1 0.7 0.60 Max 12.7 Min 5.0 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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